Lead plating | Gold, |
---|---|
Row active time | 32 ns, |
RoHS compliance | Y, |
Memory voltage | 1.2 V, |
ECC | N, |
Memory clock speed | 3200 MHz, |
Memory layout (modules x size) | 1 x 8 GB, |
Refresh row cycle time | 350 ns, |
Buffered memory type | Unregistered (unbuffered), |
Halogen-free | Y, |
Internal memory | 8 GB, |
Memory form factor | 260-pin SO-DIMM, |
Component for | Notebook, |
Row cycle time | 45.75 ns, |
CAS latency | 22, |
Internal memory type | DDR4, |
Storage temperature (T-T) | -55 - 100 °C, |
Operating temperature (T-T) | 0 - 85 °C, |
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